optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a .2 01/09 page 1 of 6 hermetic infrared emitting diode op230 series description: each device in this series is a gallium aluminum arseni de (gaaias) infrared emitting diode, mounted in a hermetic metal to-46 housing. the gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. each op231 , op232 , op233 , op234 and op235 device is lensed to provide a narrow beam angle (18) between half power points. the 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle ? combined with the specified r adiant intensity of the op231 series ? facilitates easy design in beam interrupt applications in conjuncti on with the op800 or op598 series photosensors. the op231 series is mechanically and spectrally matched to op800, op593 and op598 phototransistors. each op231w , op232w , op233w , op234w and op235w device is lensed to provide a wide beam angle (50) between half power points. the 890 nm wavelength clos ely matches the spectral response of silicon photo- transistors, while the wide beam angle provides relatively even illumination over a large area. the op231w is mechanically and spectrally matched to the op800wsl and op830sl series devices. please refer to application bulletins 208 and 210 for additional design information and reliability (degradation) data. custom electrical, wire and cabling and connectors are ava ilable. contact your local representative or optek for more information. features: ? focused and non-focused optical light pattern ? enhanced temperature range ? to-46 hermetically sealed package ? mechanically and spectrally matched to other optek devices ? choice of power ranges ? choice of narrow or wide irradiance pattern applications: ? non-contact reflecti ve object sensor ? assembly line automation ? machine automation ? machine safety ? end of travel sensor ? door sensor ?w? series rohs ordering information part number led peak wavelength output power (mw/cm 2 ) min / max total beam angle lead length 0.50" op231 890 nm 1.5 / na 18 op232 2.0 / 6.0 op233 3.0 / na op234 5.0 / na op235 6.0 / na op231w 1.5 / na 50 op232w 3.5 / 7.0 op233w 5.0 / na op234w 5.0 / na op235w 6.0 / na
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a.2 01/09 page 2 of 6 hermetic infrared emitting diode op230 series op231, op232, op233, op234, op235 op231w, op232w, op233w, op234w, op235w inches [millimeters] dimensions are in: pin # led 1 anode 2 cathode cathode anode inches [millimeters] dimensions are in: cathode anode
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a .2 01/09 page 3 of 6 hermetic infrared emitting diode op230 series absolute maximum ratings (t a =25c unless otherwise noted) storage temperature range -65 o c to +150 o c reverse voltage 2.0 a continuous forward current 100 ma peak forward current 10.0 a lead soldering temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260 c (1)(2) power dissipation 200 mw (3) operating temperature range -65 o c to +125 o c notes: 1. rma flux is recommended. duration can be exten ded to 10 seconds maximum when flow soldering. 2. derate linearly 2.0 mw/ c above 25 c. 3. measurement made with 100 s pulse measured at the tra iling edge of the pulse with a duty cycle of 0.1% and an i f = 100 ma. 4. for the op231 series, e e(apt) is a measurement of the average radiant intensity wi thin the cone formed by the measurement surface, a radius of 1.429? (36.30 mm) measured from the lens side of t he tab to the sensing surface and a sensing surface of 0.250? (6. 35 mm) in diameter forming a 10 cone. for the op231w series, e e(apt) is a measurement of the average radiant intensity within the electrical characteristics (t a = 25 c unless otherwise noted) symbol parameter min typ max units test conditions input diode apertured radiant incidence op231 op232 op233 op234 op235 1.5 2.0 3.0 5.0 6.0 - - - - - - 6.0 - - - mw/cm 2 op231 series i f = 100 ma (3 )(4) aperture = 0.250? distance = 1.429? op231w op232w op233w op234w op235w 1.5 3.5 5.0 5.0 6.0 - - - - - - 7.0 - - - mw/cm 2 op231w series i f = 100 ma (3 )(4) aperture = 0.250? distance = 0.466? p o radiant power output op231 op232 op233 - - - 6.0 8.0 10.0 - - - mw i f = 100 ma (3 )(4) v f forward voltage - - 2.0 v i f = 100 ma (3) i r reverse current - - 100 a v r = 2.0 v p wavelength at peak emission op231, op232, op233 op234, op235 - - 890 850 - - nm i f = 10 ma spectral bandwidth between half power points - 80 - nm i f = 10 ma ? p / ? t spectral shift with temperature - +0.30 - nm/c i f = constant hp emission angle at half power points op231 - op235 op231w - op231w - - 18 50 - - degree i f = 100 ma t r output rise time - 500 - ns i f(pk) =100 ma, pw=10 s, and d.c.=10.0% t f output fall time - 250 - ns e e(apt)
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a.2 01/09 page 4 of 6 hermetic infrared emitting diode op230 series op231, op232, op233 (including ?w? devices) forward voltage vs forward current vs temperature 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 0 102030405060708090100 forward current (ma) typical forward voltage (v) -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120c optical power vs i f vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 102030405060708090100 forward current i f (ma) normalized optical power -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c normalized at 50 ma and 20 c relative radiant intensity vs. angular displacement 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -20 -15 -10 -5 0 5 10 15 20 angular displacement (degrees) relative radiant intensity distance vs output power vs forward current 0 1 2 3 4 5 6 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 70 ma 80 ma 90 ma 100 ma normalized at 1" and 50 m a forward current
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a .2 01/09 page 5 of 6 hermetic infrared emitting diode op230 series distance vs output power vs forward current 0.01 0.10 1.00 10.00 0.2 '' 0.7 '' 1.2 '' 1.7 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 80 ma 100 ma 120 ma normalized at 1.0" and 50 ma forward current relative radiant intensity vs angular displacement 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -80 -30 20 70 angular displacement (degrees) relative radiant intensity forward voltage vs forward current vs temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 forward current (ma) typical forward voltage (v) -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c optical power vs forward current vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 102030405060708090100 forward current i f (ma) relative output power -60 c -40 c -20 c 0 c 20 c 40 c 60 c 80 c 100 c 120 c normalized at 50 ma and 20c op234, op234w
optek reserves the right to make changes at any time in or der to improve design and to s upply the best product possible. optek technology inc. ? 1645 wallace drive, carrollton, texas 75006 phone: (972) 323-2200 or (800) 341-4747 fax: (972) 3 23-2396 sensors@optekinc .com www. optekinc.com issue a.2 01/09 page 6 of 6 hermetic infrared emitting diode op230 series forward voltage vs forward current vs temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 5 10 15 20 25 30 35 40 45 50 forward current (ma) typical forward voltage (v) -60c -40c -20c 0c 20c 40c 60c 80c 100c 120c optical power vs forward current vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 0 102030405060708090100 forward current i f (ma) relative output power -60c -40c -20c 0c 20c 40c 60c 80c 100c 120c normalized at 50 ma and 20 c distance vs output power vs forward current 0 2 4 6 8 10 12 14 16 18 20 0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 '' distance (inches) normalized output power 10 ma 20 ma 30 ma 40 ma 50 ma 60 ma 80 ma 100 ma 120 ma normalized at 1.0" and 50 ma forward current op235, op235w
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